Physical Science International Journal

Several semiconductor materials are currently retaining attention with a view of elaboration of photodiodes in near-infrared. Photodiodes are essential components in numerous applications, including medical imaging, remote sensing, telecommunications, and optical communication systems. In research and industry, photodiodes are frequently used to accurately measure light intensity. Germanium (Ge), silicon (Si), gallium antimonide (GaSb), and indium gallium arsenide (GaInAs) are semiconductor materials commonly used in photodiode fabrication. The major asset of III-V semiconductor materials is their direct band gap (contrary to silicon), which makes them components of choice for optoelectronic devices. III-antimonides constitute a very good technical solution for near-infrared photodetection and are at the same time flexible, reliable and very well suited to the whole range of near-infrared applications. In this paper, we aim to apprehend the effect of the electric field on the performance of photodiodes based on GaSb and GaInSb under reverse polarization. We realize one-dimensional models of P-n-N and P-i-N heterojunctions under reverse polarization, in where we use GaSb as substrate and GaInSb as intrinsic layer. The simulation of the internal quantum efficiency showed us that the classical P.n model deposited on substrate is more efficient for lower energies than 0.72eV than the model P-i-N (GaSb_P/Ga_1-xIn_xSb_i/GaSb_N). On the other hand, the P.i.N model (GaSb_P/Ga_1-xIn_xSb_i/GaSb_N) remains more efficient for energies higher than 0.743eV with a practically constant internal quantum efficiency equal to 96.6%.The P-i-N photodiode model exhibits better response time with lower leakage current than the P-n-N junction model .In many application, to improve photodiode response speeds, P-i-N junctions are used rather than P-n-N junctions. The effect of the electric field allowed us to show that the P-i-N photodiode model (GaSb_P/Ga_1-xIn_xSb_i/GaSb_N) can operate under low application voltages of the order of 100mV.